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| DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel junction FETs FEATURES * High-speed switching * Interchangeability of drain and source connections * Low RDSon at zero gate voltage ( < 8 for PMBFJ108). handbook, halfpage PMBFJ108; PMBFJ109; PMBFJ110 3 d s DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. PINNING - SOT23 PIN 1 2 3 Note 1. Drain and source are interchangeable. DESCRIPTION drain source gate g 1 Top view 2 MAM385 Fig.1 Simplified outline and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb = 25C; note 1 - -65 - CONDITIONS MIN. - - - MAX. 25 -25 -25 50 250 150 150 UNIT V V V mA mW C C April 1995 2 Philips Semiconductors Product specification N-channel junction FETs THERMAL RESISTANCE SYMBOL Rth j-a Notes 1. Mounted on an FR-4 printboard. STATIC CHARACTERISTICS Tj = 25 C. SYMBOL -IGSS IDSX IDSS PARAMETER reverse gate current drain-source cut-off current drain current PMBFJ108 PMBFJ109 PMBFJ110 -V(BR)GSS -VGS(off) gate-source breakdown voltage gate-source cut-off voltage PMBFJ108 PMBFJ109 PMBFJ110 RDS(on) drain-source on-resistance PMBFJ108 PMBFJ109 PMBFJ110 VGS = 0 V VDS = 0.1 V -IG = 1 A VDS = 0 ID = 1 A VDS = 5 V PARAMETER from junction to ambient (note 1) VALUE 500 K/W UNIT PMBFJ108; PMBFJ109; PMBFJ110 CONDITIONS -VGS = 15 V VDS = 0 VGS = -10 V VDS = 5 V VGS = 0 VDS = 15 V MIN. - - MAX. 3 3 UNIT nA nA 80 40 10 - - - - 25 mA V 3 2 0.5 - - - 10 6 4 8 12 18 V April 1995 3 Philips Semiconductors Product specification N-channel junction FETs DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Cis PARAMETER input capacitance CONDITIONS VDS = 0 -VGS = 10 V f = 1 MHz VDS = 0 -VGS = 0 f = 1 MHz Tamb = 25 C VDS = 0 -VGS = 10 V f = 1 MHz PMBFJ108; PMBFJ109; PMBFJ110 TYP. 15 MAX. 30 UNIT pF Cis input capacitance 50 85 pF Crs feedback capacitance 8 15 pF Switching times (see Fig.2) td ton ts toff Notes 1. Test conditions for switching times are as follows: VDD = 1.5 V, VGS = 0 to -VGS(off) (all types); -VGS(off) = 12 V, RL = 100 (PMBFJ108); -VGS(off) = 7 V, RL = 100 (PMBFJ109); -VGS(off) = 5 V, RL = 100 (PMBFJ110). delay time turn-on time storage time turn-off time note 1 note 1 note 1 note 1 2 4 4 6 - - - - ns ns ns ns k, halfpage VDD 10 nF 50 10 F 0.1 F VGS = 0 V Vi 10% RL SAMPLING SCOPE 50 -VGS off 90% toff ts 90% tf td ton tr DUT 50 Vo MBK295 10% MBK294 Fig.2 Switching circuit. Fig.3 Input and output waveforms. April 1995 4 Philips Semiconductors Product specification N-channel junction FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBFJ108; PMBFJ109; PMBFJ110 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1995 5 Philips Semiconductors Product specification N-channel junction FETs DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PMBFJ108; PMBFJ109; PMBFJ110 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 |
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